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| PD-91490C IRFP3710 HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.025W G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ID = 57A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 57 40 180 200 1.3 20 530 28 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RqJC RqCS RqJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 0.75 --- 40 Units C/W www.irf.com 1 IRFP3710 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS DV(BR)DSS/DTJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 100 --- --- 2.0 20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.12 --- --- --- --- --- --- --- --- --- --- 14 59 58 48 5.0 13 3000 640 330 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.025 W VGS = 10V, ID = 28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 190 ID = 28A 26 nC VDS = 80V 82 VGS = 1.7V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5W --- RD = 1.7W See Fig. 10 , D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 57 showing the A G integral reverse --- --- 180 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 28A, VGS = 0V --- 210 320 ns TJ = 25C, IF = 28A --- 1.7 2.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRF3710 data and test conditions Starting TJ = 25C, L = 1.4mH RG = 25W , IAS = 28A. (See Figure 12) I 28A, di/dt 460A/s, VDD V(BR)DSS, SD TJ 175C 2 www.irf.com IRFP3710 1000 I , D rain-to-S ource C urrent (A ) D 100 I , D rain-to-S ource C urrent (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 10 4.5V 1 0.1 1 20 s P U LS E W ID TH TC = 25C 10 100 A 1 0.1 20 s P U LS E W ID TH T C = 175C 1 10 A 100 V D S , D rain-to-S ource V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R D S (on) , D rain-to-S ource O n R esistance (N orm alized) I D = 46A I D , D ra in -to-S o urc e C urren t (A ) 2.5 T J = 2 5 C 100 2.0 T J = 1 7 5 C 1.5 10 1.0 0.5 1 4 5 6 7 VDS = 50V 2 0 s P U L S E W ID T H 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10V 100 120 140 160 180 A V G S , G a te -to -S o u rce V o lta g e (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFP3710 6000 5000 V G S , G ate-to-S ource V oltage (V ) V GS C iss C rss C oss = = = = 0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd 20 I D = 28 A V D S = 80V V D S = 50V V D S = 20V 16 C , C apacitanc e (pF ) C is s 4000 12 3000 C os s 2000 8 C rs s 1000 4 0 1 10 100 A 0 0 40 80 FO R TE S T C IR C U IT S E E FIG U R E 13 120 160 200 A V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R everse D rain C urrent (A ) O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (on) I D , D rain C urrent (A ) 100 10 s 100 T J = 17 5C T J = 25C 10 100 s 10 1m s 10m s 1 0.4 0.8 1.2 1.6 V G S = 0V A 1 1 T C = 25C T J = 175C S ingle P ulse 10 100 2.0 A 1000 V S D , S ource-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRFP3710 60 VDS 50 RD VGS RG D.U.T. + I D , Drain Current (A) 40 -VDD 10V 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP3710 1200 E A S , S ingle P ulse A valanc he E nergy (m J) TO P 1000 15V B O TTO M ID 11A 20A 28 A VDS L D R IVE R 800 600 RG 20V D .U .T IA S tp + V - DD A 400 0 .01 Fig 12a. Unclamped Inductive Test Circuit 200 0 V D D = 25V 25 50 75 100 125 150 A 175 V (B R )D S S tp S tarting T J , Junction T em perature (C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com IRFP3710 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP3710 Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) 0.25 (.010) M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) LE A D A S S IG N M E N TS 1 2 3 4 G A TE D R A IN SOURCE D R A IN -DDBM 5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 2X 5.50 (.217) 4.50 (.177) NOTES: 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TLIN E T O -247-A C . 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) Part Marking Information TO-247AC E X A M P L E : TH IS IS A N IR F P E 3 0 W ITH A S S E M B L Y LOT CODE 3A1Q A IN TE R N A TIO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE PART NUMBER IR F P E 3 0 3A 1 Q 9 3 0 2 D A TE C O D E (Y YW W ) YY = YEAR W W W EEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/98 8 www.irf.com |
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